FKP253
- Mfr.Part #
- FKP253
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 20A TO220
- Stock
- 22,364
- In Stock :
- 22,364
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 160 mJ
- Pulsed Drain Current-Max (IDM) :
- 80A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Not For New Designs
- Package / Case :
- TO-220-3 Full Pack
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 40W Tc
- Series :
- --
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Published :
- 2007
- ECCN Code :
- EAR99
- Manufacturer :
- Sanken Electric Co Ltd
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 40W (Tc)
- Supplier Device Package :
- TO-220
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 10A, 10V
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 12 Weeks
- Reach Compliance Code :
- Unknown
- Packaging :
- Bulk
- Drain to Source Voltage (Vdss) :
- 250V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 20A
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Package :
- Bulk
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.29.00.95
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 250V
- Drain-source On Resistance-Max :
- 0.095Ohm
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FKP253

N-Channel Bulk 95m Ω @ 10A, 10V ±30V 1600pF @ 25V 250V TO-220-3 Full Pack
FKP253 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 160 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 80A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FKP253 Features
the avalanche energy rating (Eas) is 160 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 80A.
a 250V drain to source voltage (Vdss)
FKP253 Applications
There are a lot of Sanken
FKP253 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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