FJN5471PWD

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Mfr.Part #
FJN5471PWD
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 20V 5A TO92-3
Stock
12,718
In Stock :
12,718

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
150MHz
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce :
700 @ 500mA 2V
Current - Collector (Ic) (Max) :
5A
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
20V
Power - Max :
750mW
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
NPN
Datasheets
FJN5471PWD
Introducing Transistors - Bipolar (BJT) - Single onsemi FJN5471PWD from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:150°C TJ, Mounting Type:Through Hole, FJN5471PWD pinout, FJN5471PWD datasheet PDF, FJN5471PWD amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJN5471PWD ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJN5471PWD


NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

FJN5471PWD Overview


This device has a DC current gain of 700 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 20VV - Maximum voltage.

FJN5471PWD Features


the DC current gain for this device is 700 @ 500mA 2V
the vce saturation(Max) is 500mV @ 100mA, 3A


FJN5471PWD Applications


There are a lot of ON Semiconductor
FJN5471PWD applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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