FF800R12KE3NOSA1

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Mfr.Part #
FF800R12KE3NOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 1200A 3900W
Stock
42,895
In Stock :
42,895

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Published :
2002
Configuration :
Single
Terminal Position :
UPPER
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 800A
Number of Terminations :
10
Case Connection :
Isolated
Lead Free :
Contains Lead
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
1140 ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Cies) @ Vce :
57nF @ 25V
Element Configuration :
Dual
Number of Pins :
130
RoHS Status :
RoHS Compliant
Power Dissipation :
3.9kW
Collector Emitter Breakdown Voltage :
1.2kV
Power - Max :
3900W
Polarity/Channel Type :
N-Channel
Collector Emitter Saturation Voltage :
1.7V
Turn On Time :
880 ns
Operating Temperature :
-40°C~125°C
NTC Thermistor :
No
Max Collector Current :
1.2kA
Terminal Form :
UNSPECIFIED
Number of Elements :
2
Package / Case :
Module
Current - Collector Cutoff (Max) :
5mA
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Factory Lead Time :
36 Weeks
Collector Emitter Voltage (VCEO) :
1.2kV
Mount :
Screw
Current - Collector (Ic) (Max) :
1200A
JESD-30 Code :
R-XUFM-X10
Pin Count :
10
Halogen Free :
Not Halogen Free
Input :
Standard
Pbfree Code :
No
Introducing Transistors - IGBTs - Modules Infineon Technologies FF800R12KE3NOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:10, Mounting Type:Chassis Mount, Number of Pins:130, Operating Temperature:-40°C~125°C, Package / Case:Module, FF800R12KE3NOSA1 pinout, FF800R12KE3NOSA1 datasheet PDF, FF800R12KE3NOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF800R12KE3NOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF800R12KE3NOSA1


FF800R12KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF800R12KE3NOSA1 Description


The FF800R12KE3NOSA1 is a PrimePACK? 2 1200 V, 900 A dual IGBT module with TRENCHSTOP? IGBT4, Emitter Controlled 4 Diode, NTC and fast switching chip. Also available with pre-applied Thermal Interface Material. 



FF800R12KE3NOSA1 Features


  • Extended operation temperature Tvj op

  • High DC stability

  • High short circuit capability, self-limiting short circuit current

  • Low switching losses

  • Unbeatable robustness

  • VCEsat with a positive temperature coefficient

  • 4 kV AC 1 min insulation

  • Package with CTI > 400

  • High creepage and clearance distances

  • High power and thermal cycling capability

  • Substrate for low thermal resistance

  • UL recognized



FF800R12KE3NOSA1 Applications


  • Motor control and drives

  • Power converter and inverter for wind turbines

  • Traction

  • Uninterruptible Power Supplies (UPS)


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