FESB8DT-E3/81

Manufacturer :

Vishay

Product Category :

Diodes - Rectifiers - Single

Diode Type :

Standard

Reverse Recovery Time :

35 ns

Max Repetitive Reverse Voltage (Vrrm) :

200V

Peak Reverse Current :

10μA

Application :

EFFICIENCY

Forward Voltage :

950mV

Voltage - Forward (Vf) (Max) @ If :

950mV @ 8A

Number of Terminations :

2

Output Current-Max :

8A

Pbfree Code :

yes

Diode Element Material :

SILICON

Operating Temperature - Junction :

-55°C~150°C

Peak Non-Repetitive Surge Current :

125A

Min Operating Temperature :

-55°C

Current - Reverse Leakage @ Vr :

10µA @ 200V

Number of Phases :

1

Forward Current :

8A

Max Surge Current :

125A

ECCN Code :

EAR99

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Published :

2011

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Recovery Time :

35 ns

Max Reverse Voltage (DC) :

200V

Number of Elements :

1

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Position :

Single

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

HTS Code :

8541.10.00.80

Factory Lead Time :

20 Weeks

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Average Rectified Current :

8A

Additional Feature :

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Peak Reflow Temperature (Cel) :

245

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

FESB8D

Reverse Voltage :

200V

Mount :

Surface Mount

Element Configuration :

Common Cathode