FDU7N60NZTU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

2.5mm

Number of Terminations :

3

Length :

6.8mm

ECCN Code :

EAR99

Height :

7.57mm

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

22A

Continuous Drain Current (ID) :

5.5A

Factory Lead Time :

5 Weeks

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

90W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 2.75A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Vgs (Max) :

±25V

Reach Compliance Code :

not_compliant

Power Dissipation :

90W

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Published :

2013

Element Configuration :

Single

Weight :

343.08mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Turn On Delay Time :

17.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Series :

UniFET-II™

HTS Code :

8541.29.00.95

Gate to Source Voltage (Vgs) :

25V