FDU2572
- Mfr.Part #
- FDU2572
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A IPAK
- Stock
- 1,711
- In Stock :
- 1,711
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.054Ohm
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Pin Count :
- 3
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 4A
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 150V
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Terminal Finish :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.77pF @ 25V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 150V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 135W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDU2572

N-Channel Tube 54m Ω @ 9A, 10V ±20V 1.77pF @ 25V 34nC @ 10V 150V TO-251-3 Short Leads, IPak, TO-251AA
FDU2572 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 36 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.77pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDU2572 Features
the avalanche energy rating (Eas) is 36 mJ
a 150V drain to source voltage (Vdss)
FDU2572 Applications
There are a lot of Rochester Electronics, LLC
FDU2572 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDU2572 | onsemi | 1,711 | MOSFET N-CH 150V 4A/29A IPAK |
















