FDU044AN03L
- Mfr.Part #
- FDU044AN03L
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/35A IPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 30V
- Qualification Status :
- COMMERCIAL
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 30V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Avalanche Energy Rating (Eas) :
- 690 mJ
- JESD-30 Code :
- R-PSIP-T3
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.16pF @ 15V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation-Max :
- 160W Tc
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain Current-Max (Abs) (ID) :
- 35A
- Surface Mount :
- No
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 35A Tc
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDU044AN03L

N-Channel Tube 3.9m Ω @ 35A, 10V ±20V 5.16pF @ 15V 118nC @ 10V 30V TO-251-3 Short Leads, IPak, TO-251AA
FDU044AN03L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.16pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 35A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDU044AN03L Features
the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)
FDU044AN03L Applications
There are a lot of Rochester Electronics, LLC
FDU044AN03L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDU044AN03L | onsemi | 1 | MOSFET N-CH 30V 21A/35A IPAK |
| FDU068AN03L | onsemi | 814 | MOSFET N-CH 30V 17A/35A IPAK |
| FDU068AN03L | onsemi | 814 | MOSFET N-CH 30V 17A/35A IPAK |
















