FDT3N40TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2A

Terminal Position :

Dual

Radiation Hardening :

No

Rise Time :

30ns

Height :

1.6mm

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-261-4, TO-261AA

Fall Time (Typ) :

25 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

8A

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation :

2W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Contact Plating :

Tin

JESD-30 Code :

R-PDSO-G4

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Number of Pins :

3

Series :

UniFET™

REACH SVHC :

No SVHC

Element Configuration :

Single

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Case Connection :

DRAIN

JESD-609 Code :

e3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 25V

Factory Lead Time :

24 Weeks

Power Dissipation-Max :

2W Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Length :

6.5mm

Turn-Off Delay Time :

10 ns

Avalanche Energy Rating (Eas) :

46 mJ

Weight :

188mg

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

400V

Width :

3.5mm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA