FDMS8888
- Mfr.Part #
- FDMS8888
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 4,973
- In Stock :
- 4,973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PDSO-N5
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 4 ns
- Length :
- 5mm
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Height :
- 1.05mm
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 13.5A, 10V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Nominal Vgs :
- 1.9 V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 23 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Continuous Drain Current (ID) :
- 13.5A
- Power Dissipation :
- 42W
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Series :
- PowerTrench®
- Turn On Delay Time :
- 9 ns
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Rise Time :
- 6ns
- Drain to Source Breakdown Voltage :
- 30V
- Factory Lead Time :
- 26 Weeks
- Weight :
- 74mg
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Width :
- 6mm
- Vgs (Max) :
- ±20V
- Datasheets
- FDMS8888

N-Channel Tape & Reel (TR) 9.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8888 N-Channel MOSFET has been created to minimize the loss in power conversion applications. FDMS8888 MOSFET has been upgraded to meet the latest advances in silicon and package technology are combined to provide the most efficient rDS(on) and high switching performance. ON Semiconductor FDMS8888 is suitable for notebook PC Synchronous Buck, Notebook PC Notebook Vcore and Notebook Battery Pack, Server and Switching Load Switch.
FDMS8888 Features
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8888 Applications
Notebook PC
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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