FDMS8888
- Mfr.Part #
- FDMS8888
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 4,973
- In Stock :
- 4,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerTDFN
- Drain to Source Breakdown Voltage :
- 30V
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 13.5A, 10V
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- Nominal Vgs :
- 1.9 V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Turn On Delay Time :
- 9 ns
- Mount :
- Surface Mount
- Rise Time :
- 6ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Factory Lead Time :
- 26 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 23 ns
- Weight :
- 74mg
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 5
- Height :
- 1.05mm
- Width :
- 6mm
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 13.5A
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 4 ns
- Length :
- 5mm
- Power Dissipation :
- 42W
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-N5
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Datasheets
- FDMS8888
FDMS8888 Documents

N-Channel Tape & Reel (TR) 9.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8888 N-Channel MOSFET has been created to minimize the loss in power conversion applications. FDMS8888 MOSFET has been upgraded to meet the latest advances in silicon and package technology are combined to provide the most efficient rDS(on) and high switching performance. ON Semiconductor FDMS8888 is suitable for notebook PC Synchronous Buck, Notebook PC Notebook Vcore and Notebook Battery Pack, Server and Switching Load Switch.
FDMS8888 Features
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8888 Applications
Notebook PC
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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