FDMS8888
- Mfr.Part #
- FDMS8888
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 4,973
- In Stock :
- 4,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Factory Lead Time :
- 26 Weeks
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-N5
- Turn On Delay Time :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Nominal Vgs :
- 1.9 V
- Mounting Type :
- Surface Mount
- Length :
- 5mm
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.0095Ohm
- Height :
- 1.05mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Case Connection :
- DRAIN
- Series :
- PowerTrench®
- Power Dissipation :
- 42W
- Mount :
- Surface Mount
- Width :
- 6mm
- Transistor Element Material :
- SILICON
- Rise Time :
- 6ns
- Transistor Application :
- SWITCHING
- Weight :
- 74mg
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 23 ns
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 13.5A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 13.5A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 4 ns
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Terminations :
- 5
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Datasheets
- FDMS8888

N-Channel Tape & Reel (TR) 9.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8888 N-Channel MOSFET has been created to minimize the loss in power conversion applications. FDMS8888 MOSFET has been upgraded to meet the latest advances in silicon and package technology are combined to provide the most efficient rDS(on) and high switching performance. ON Semiconductor FDMS8888 is suitable for notebook PC Synchronous Buck, Notebook PC Notebook Vcore and Notebook Battery Pack, Server and Switching Load Switch.
FDMS8888 Features
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
FDMS8888 Applications
Notebook PC
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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