FDMS8880
- Mfr.Part #
- FDMS8880
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.5A/21A 8PQFN
- Stock
- 31,428
- In Stock :
- 31,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1585pF @ 15V
- Power Dissipation :
- 2.5W
- Rise Time :
- 6ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JEDEC-95 Code :
- MO-240AA
- Drain to Source Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 13.5A, 10V
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 23 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Factory Lead Time :
- 18 Weeks
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-PowerTDFN
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 21A Tc
- JESD-30 Code :
- R-PDSO-N5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 9 ns
- Fall Time (Typ) :
- 4 ns
- Continuous Drain Current (ID) :
- 13.5A
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Weight :
- 68.1mg
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Datasheets
- FDMS8880

N-Channel Tape & Reel (TR) 8.5m Ω @ 13.5A, 10V ±20V 1585pF @ 15V 33nC @ 10V 8-PowerTDFN
FDMS8880 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 1585pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDMS8880 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 13.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
FDMS8880 Applications
There are a lot of ON Semiconductor
FDMS8880 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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