FDMS8692

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Mfr.Part #
FDMS8692
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 12A/28A 8PQFN
Stock
31,507
In Stock :
31,507

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-PowerTDFN
DS Breakdown Voltage-Min :
30V
Number of Terminations :
5
Rds On (Max) @ Id, Vgs :
9m Ω @ 12A, 10V
Drain Current-Max (Abs) (ID) :
12A
Pulsed Drain Current-Max (IDM) :
120A
Vgs (Max) :
±20V
Terminal Form :
Flat
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
2.5W Ta 41W Tc
Drain-source On Resistance-Max :
0.009Ohm
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Case Connection :
DRAIN
Pin Count :
8
Pbfree Code :
yes
Terminal Finish :
NOT SPECIFIED
FET Type :
N-Channel
Series :
PowerTrench®
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
1.265pF @ 15V
Surface Mount :
yes
Current - Continuous Drain (Id) @ 25°C :
12A Ta 28A Tc
JESD-30 Code :
R-PDSO-F5
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Avalanche Energy Rating (Eas) :
72 mJ
Qualification Status :
COMMERCIAL
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Datasheets
FDMS8692
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS8692 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMS8692 pinout, FDMS8692 datasheet PDF, FDMS8692 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS8692 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS8692


N-Channel Tape & Reel (TR) 9m Ω @ 12A, 10V ±20V 1.265pF @ 15V 21nC @ 10V 30V 8-PowerTDFN

FDMS8692 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.A device's maximum input capacitance is 1.265pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDMS8692 Features


the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)


FDMS8692 Applications


There are a lot of Rochester Electronics, LLC
FDMS8692 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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