FDMS8672AS
- Mfr.Part #
- FDMS8672AS
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 18A/28A 8PQFN
- Stock
- 22,922
- In Stock :
- 22,922
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 18A, 10V
- Avalanche Energy Rating (Eas) :
- 253 mJ
- Terminal Form :
- NO LEAD
- Drain to Source Voltage (Vdss) :
- 30V
- DS Breakdown Voltage-Min :
- 30V
- Package / Case :
- 8-PowerTDFN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Pin Count :
- 8
- Terminal Finish :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.6pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta 28A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.005ohm
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Terminations :
- 5
- Surface Mount :
- yes
- JESD-30 Code :
- R-PDSO-N5
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 2.5W Ta 70W Tc
- Qualification Status :
- COMMERCIAL
- Series :
- PowerTrench®
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 18A
- Datasheets
- FDMS8672AS

N-Channel Tape & Reel (TR) 5m Ω @ 18A, 10V ±20V 2.6pF @ 15V 40nC @ 10V 30V 8-PowerTDFN
FDMS8672AS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 253 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.6pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 18A.There is a peak drain current of 200A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDMS8672AS Features
the avalanche energy rating (Eas) is 253 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)
FDMS8672AS Applications
There are a lot of Rochester Electronics, LLC
FDMS8672AS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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