FDMS8670
- Mfr.Part #
- FDMS8670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 24A/42A 8PQFN
- Stock
- 22,027
- In Stock :
- 22,027
Request A Quote(RFQ)
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 42A Tc
- Series :
- PowerTrench®, SyncFET™
- Turn-Off Delay Time :
- 37 ns
- JESD-30 Code :
- R-PDSO-F5
- Rise Time :
- 19ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 15V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 42A
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 68.1mg
- Power Dissipation :
- 2.5W
- Turn On Delay Time :
- 14 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-PowerTDFN
- Threshold Voltage :
- 1.5V
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 20A, 10V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- Case Connection :
- DRAIN
- Resistance :
- 3.5mOhm
- Terminal Form :
- Flat
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- JESD-609 Code :
- e3
- Current Rating :
- 42A
- Drain Current-Max (Abs) (ID) :
- 20A
- Pulsed Drain Current-Max (IDM) :
- 200A
- Datasheets
- FDMS8670
FDMS8670 Documents

N-Channel Tape & Reel (TR) 3.5m Ω @ 20A, 10V ±20V 4000pF @ 15V 73nC @ 10V 8-PowerTDFN
FDMS8670S Description
The FDMS8670S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS8670S Features
-
Maximum RDS(on) = 3.5mΩ at VGS = 10V, ID = 20A
-
Maximum RDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
RoHS Compliant
FDMS8670S Applications
-
This product is general usage and suitable for many different applications.
-
Synchronous Rectifier for DC/DC Converters
-
Notebook Vcore/GPU low side switch
-
Networking Point of Load low side switch
-
Telecom secondary side rectification
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