FDMS8660AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0021Ohm

Case Connection :

DRAIN

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N5

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 28A, 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 49A Tc

Avalanche Energy Rating (Eas) :

726 mJ

Terminal Position :

Dual

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

200A

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

28A

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 104W Tc

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

3V @ 1mA

Package / Case :

8-PowerTDFN

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5.865pF @ 15V