FDMS86520

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Terminal Form :

Flat

Number of Pins :

8

ECCN Code :

EAR99

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Channels :

1

Package / Case :

8-PowerTDFN

Element Configuration :

Single

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

13 Weeks

Power Dissipation-Max :

2.5W Ta 69W Tc

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

42A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Published :

2010

Length :

5.1mm

Terminal Position :

Dual

Width :

6.25mm

Fall Time (Typ) :

4 ns

Rise Time :

6.7ns

Height :

1.1mm

Series :

PowerTrench®

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

69W

Weight :

68.1mg

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 30V

JEDEC-95 Code :

MO-240AA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 14A, 10V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

14A Ta 42A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0074Ohm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

60V

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1