FDMS86500DC

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

29A Ta 108A Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

200A

Case Connection :

DRAIN

Number of Channels :

1

Power Dissipation-Max :

3.2W Ta 125W Tc

ECCN Code :

EAR99

Package / Case :

8-PowerTDFN

Number of Elements :

1

Series :

Dual Cool™, PowerTrench®

Power Dissipation :

3.2W

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

34 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Width :

5.85mm

Fall Time (Typ) :

8.2 ns

Pbfree Code :

yes

Height :

1.05mm

Gate to Source Voltage (Vgs) :

20V

Weight :

90mg

JEDEC-95 Code :

MO-240AA

Radiation Hardening :

No

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

JESD-30 Code :

R-PDSO-F5

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0023Ohm

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

35 ns

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 29A, 10V

Element Configuration :

Single

Published :

2010

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Length :

5.1mm

Input Capacitance (Ciss) (Max) @ Vds :

7680pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

13 Weeks

Drain Current-Max (Abs) (ID) :

60A

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

29A

Vgs (Max) :

±20V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

25ns