FDMS86369
- Mfr.Part #
- FDMS86369
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- FET 80V 7.5MOHM PQFN8
- Stock
- 25,800
- In Stock :
- 25,800
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2470pF @ 40V
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- Automotive, AEC-Q101, PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-N5
- Power Dissipation-Max :
- 107W Tc
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Weight :
- 172.8mg
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 65A, 10V
- Terminal Form :
- NO LEAD
- Drain to Source Voltage (Vdss) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 5
- Package / Case :
- 8-PowerTDFN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 27 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Continuous Drain Current (ID) :
- 65A
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Datasheets
- FDMS86369
N-Channel Tape & Reel (TR) 7.5m Ω @ 65A, 10V ±20V 2470pF @ 40V 46nC @ 10V 80V 8-PowerTDFN
FDMS86369-F085 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 27 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2470pF @ 40V.This device conducts a continuous drain current (ID) of 65A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDMS86369-F085 Features
the avalanche energy rating (Eas) is 27 mJ
a continuous drain current (ID) of 65A
a 80V drain to source voltage (Vdss)
FDMS86369-F085 Applications
There are a lot of ON Semiconductor
FDMS86369-F085 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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