FDMS86368-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

214W Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

80A

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0045ohm

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Factory Lead Time :

5 Weeks

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

80V

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

82 mJ

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N5

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Terminations :

5

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 80A, 10V

Drain to Source Voltage (Vdss) :

80V

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

not_compliant