FDMS86350ET80
- Mfr.Part #
- FDMS86350ET80
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 25A/198A POWER56
- Stock
- 2,680
- In Stock :
- 2,680
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- JEDEC-95 Code :
- MO-240AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 8030pF @ 40V
- Fall Time (Typ) :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Drain to Source Breakdown Voltage :
- 80V
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.0024Ohm
- ECCN Code :
- EAR99
- Terminal Form :
- NO LEAD
- Power Dissipation-Max :
- 3.3W Ta 187W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- JESD-30 Code :
- R-PDSO-N5
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 34ns
- Turn-Off Delay Time :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 198A
- Number of Terminations :
- 5
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta 198A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 693A
- Turn On Delay Time :
- 50 ns
- Package / Case :
- 8-PowerTDFN
- Reach Compliance Code :
- not_compliant
- Series :
- PowerTrench®
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 25A, 10V
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Weight :
- 56.5mg
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- FDMS86350ET80
FDMS86350ET80 Documents

N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V ±20V 8030pF @ 40V 155nC @ 10V 8-PowerTDFN
FDMS86350ET80 Description
FDMS86350ET80 is a kind of N-channel MOSFET that is designed based on the advanced PowerTrench? process provided by ON Semiconductor to minimize the on-state resistance and ensure superior switching performance. The advanced package is combined with silicon to provide low RDS (on) and high efficiency. N-channel MOSFET FDMS86350ET80 is well suited for load switch, primary MOSFET, motor control switch, and synchronous rectification.
FDMS86350ET80 Features
-
Low RDS (on)
-
Fast switching speed
-
Advanced trench technology
-
Available in the Power 56 package
-
Advanced package and silicon combination
FDMS86350ET80 Applications
-
Load switch
-
Primary MOSFET
-
Motor control switch
-
Synchronous rectification
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