FDMS86350

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

25A

Height :

1.1mm

Series :

PowerTrench®

Turn-Off Delay Time :

40 ns

Rise Time :

34ns

Length :

5.1mm

Operating Temperature :

-55°C~150°C TJ

Weight :

56.5mg

Number of Pins :

8

Turn On Delay Time :

50 ns

Fall Time (Typ) :

11 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN

JEDEC-95 Code :

MO-240AA

Power Dissipation-Max :

2.7W Ta 156W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Element Configuration :

Single

Number of Terminations :

5

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Published :

2017

Drain to Source Breakdown Voltage :

80V

Drain-source On Resistance-Max :

0.0024Ohm

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Ta 130A Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-N5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Width :

6.25mm

Pulsed Drain Current-Max (IDM) :

300A

Terminal Position :

Dual

Number of Elements :

1

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

10680pF @ 40V

Power Dissipation :

2.7W

Vgs(th) (Max) @ Id :

4.5V @ 250μA