FDMS86350

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Pulsed Drain Current-Max (IDM) :

300A

JEDEC-95 Code :

MO-240AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Pins :

8

Rise Time :

34ns

Max Junction Temperature (Tj) :

150°C

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

80V

Turn On Delay Time :

50 ns

Number of Channels :

1

Factory Lead Time :

13 Weeks

Pbfree Code :

yes

Turn-Off Delay Time :

40 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Series :

PowerTrench®

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Published :

2017

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Fall Time (Typ) :

11 ns

Radiation Hardening :

No

Weight :

56.5mg

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Power Dissipation :

2.7W

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

25A Ta 130A Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Length :

5.1mm

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

10680pF @ 40V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

25A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Element Material :

SILICON

Mount :

Surface Mount

Width :

6.25mm

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-N5

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation-Max :

2.7W Ta 156W Tc

Drain-source On Resistance-Max :

0.0024Ohm

Terminal Position :

Dual