FDMS86350

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Mfr.Part #
FDMS86350
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 80V 25A/130A POWER56
Stock
1,648
In Stock :
1,648

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Height :
1.1mm
Pulsed Drain Current-Max (IDM) :
300A
JEDEC-95 Code :
MO-240AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Number of Pins :
8
Rise Time :
34ns
Max Junction Temperature (Tj) :
150°C
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
80V
Turn On Delay Time :
50 ns
Number of Channels :
1
Factory Lead Time :
13 Weeks
Pbfree Code :
yes
Turn-Off Delay Time :
40 ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Series :
PowerTrench®
Package / Case :
8-PowerTDFN
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Published :
2017
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Fall Time (Typ) :
11 ns
Radiation Hardening :
No
Weight :
56.5mg
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
5
Power Dissipation :
2.7W
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
25A Ta 130A Tc
Vgs (Max) :
±20V
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Length :
5.1mm
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
10680pF @ 40V
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
25A
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Transistor Element Material :
SILICON
Mount :
Surface Mount
Width :
6.25mm
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 25A, 10V
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PDSO-N5
Element Configuration :
Single
ECCN Code :
EAR99
Power Dissipation-Max :
2.7W Ta 156W Tc
Drain-source On Resistance-Max :
0.0024Ohm
Terminal Position :
Dual
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86350 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Channels:1, Package / Case:8-PowerTDFN, Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMS86350 pinout, FDMS86350 datasheet PDF, FDMS86350 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86350 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86350


N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V ±20V 10680pF @ 40V 155nC @ 10V 8-PowerTDFN

FDMS86350 Description


FDMS86350 is an N-Channel PowerTrench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMS86350 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDMS86350 is offered in the Power-56-8 package. It is specified for operation from -55°C to +150°C with 156W power dissipation. 



FDMS86350 Features


  • Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A

  • Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86350 Applications


  • Primary MOSFET

  • Synchronous Rectifier

  • Load Switch

  • Motor Control Switch

  • RON and Inrush Current Calculations


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