FDMS86322

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Terminations :

5

Threshold Voltage :

2.9V

Pbfree Code :

yes

Length :

5mm

Number of Pins :

8

Weight :

68.1mg

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 104W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rise Time :

20ns

Width :

6mm

Height :

1.05mm

Factory Lead Time :

10 Weeks

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.00765Ohm

Continuous Drain Current (ID) :

13A

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

13A Ta 60A Tc

Rds On (Max) @ Id, Vgs :

7.65m Ω @ 13A, 10V

Series :

PowerTrench®

Vgs (Max) :

±20V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

200A

JEDEC-95 Code :

MO-240AA

REACH SVHC :

No SVHC

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

27 ns

Power Dissipation :

104W

Drain to Source Breakdown Voltage :

80V

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Published :

2010

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Fall Time (Typ) :

13 ns

Mounting Type :

Surface Mount

Terminal Position :

Dual