FDMS86320
- Mfr.Part #
- FDMS86320
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 10.5A/22A 8PQFN
- Stock
- 23
- In Stock :
- 23
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 5 ns
- Length :
- 5mm
- JEDEC-95 Code :
- MO-240AA
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 22A
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Height :
- 1.05mm
- Contact Plating :
- Tin
- Weight :
- 74mg
- Drain to Source Breakdown Voltage :
- 80V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Width :
- 6mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2640pF @ 40V
- Package / Case :
- 8-PowerTDFN
- JESD-30 Code :
- R-PDSO-F5
- Rds On (Max) @ Id, Vgs :
- 11.7m Ω @ 10.5A, 10V
- Turn-Off Delay Time :
- 20 ns
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Ta 22A Tc
- Pulsed Drain Current-Max (IDM) :
- 50A
- Turn On Delay Time :
- 15 ns
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 10.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 8ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Element Configuration :
- Single
- Power Dissipation :
- 69W
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- Datasheets
- FDMS86320

N-Channel Tape & Reel (TR) 11.7m Ω @ 10.5A, 10V ±20V 2640pF @ 40V 41nC @ 10V 8-PowerTDFN
Description
The FDMS86320 is an 80V, 44A, 11.7m N-Channel PowerTrench? MOSFET. This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low RDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.
Features
-
Next generation enhanced body diode technology, engineered for soft recovery
-
MSL1 robust package design
-
100% UIL Tested
-
RoHS Compliant
-
Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A
-
Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Applications
-
DC-DC Merchant Power Supply
-
Motor Bridge Switch
-
Synchronous Rectifier
-
As Switching Devices in Electronic Control Units
-
As Power Converters in Modern Electric Vehicles
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