FDMS86320

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

50A

Contact Plating :

Tin

ECCN Code :

EAR99

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 10.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

22A

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 69W Tc

Continuous Drain Current (ID) :

10.5A

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

80V

Mounting Type :

Surface Mount

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

2640pF @ 40V

Length :

5mm

JESD-30 Code :

R-PDSO-F5

Pbfree Code :

yes

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

60 mJ

Transistor Application :

SWITCHING

Rise Time :

8ns

Height :

1.05mm

Turn On Delay Time :

15 ns

Weight :

74mg

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Pins :

8

Radiation Hardening :

No

JEDEC-95 Code :

MO-240AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

20 ns

Power Dissipation :

69W

Fall Time (Typ) :

5 ns

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta 22A Tc

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Case Connection :

DRAIN

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Position :

Dual