FDMS86310
- Mfr.Part #
- FDMS86310
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 17A/50A 8PQFN
- Stock
- 8,756
- In Stock :
- 8,756
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6290pF @ 40V
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 50A
- Fall Time (Typ) :
- 9 ns
- JEDEC-95 Code :
- MO-240AA
- Weight :
- 68.1mg
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 96W
- Element Configuration :
- Single
- Factory Lead Time :
- 13 Weeks
- Width :
- 5.85mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 2.5W Ta 96W Tc
- Turn-Off Delay Time :
- 35 ns
- Case Connection :
- DRAIN
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Length :
- 5.1mm
- Height :
- 1.05mm
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 28 ns
- Rise Time :
- 23ns
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 17A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 50A Tc
- JESD-30 Code :
- R-PDSO-F5
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 17A, 10V
- Datasheets
- FDMS86310

N-Channel Tape & Reel (TR) 4.8m Ω @ 17A, 10V ±20V 6290pF @ 40V 95nC @ 10V 8-PowerTDFN
FDMS86310 Description
This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.
FDMS86310 Features
Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86310 Applications
DC-DC Merchant Power Supply
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