FDMS86310
- Mfr.Part #
- FDMS86310
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 17A/50A 8PQFN
- Stock
- 8,756
- In Stock :
- 8,756
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta 96W Tc
- Width :
- 5.85mm
- Rise Time :
- 23ns
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Series :
- PowerTrench®
- FET Type :
- N-Channel
- Power Dissipation :
- 96W
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 28 ns
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 80V
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6290pF @ 40V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 50A Tc
- Drain Current-Max (Abs) (ID) :
- 50A
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 17A, 10V
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Height :
- 1.05mm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Fall Time (Typ) :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Weight :
- 68.1mg
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Length :
- 5.1mm
- JESD-30 Code :
- R-PDSO-F5
- Continuous Drain Current (ID) :
- 17A
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- MO-240AA
- Package / Case :
- 8-PowerTDFN
- Datasheets
- FDMS86310
FDMS86310 Documents

N-Channel Tape & Reel (TR) 4.8m Ω @ 17A, 10V ±20V 6290pF @ 40V 95nC @ 10V 8-PowerTDFN
FDMS86310 Description
This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.
FDMS86310 Features
Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86310 Applications
DC-DC Merchant Power Supply
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