FDMS86310

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Mfr.Part #
FDMS86310
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 80V 17A/50A 8PQFN
Stock
8,756
In Stock :
8,756

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
6290pF @ 40V
Number of Pins :
8
Drain Current-Max (Abs) (ID) :
50A
Fall Time (Typ) :
9 ns
JEDEC-95 Code :
MO-240AA
Weight :
68.1mg
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
96W
Element Configuration :
Single
Factory Lead Time :
13 Weeks
Width :
5.85mm
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Package / Case :
8-PowerTDFN
Power Dissipation-Max :
2.5W Ta 96W Tc
Turn-Off Delay Time :
35 ns
Case Connection :
DRAIN
Terminal Form :
Flat
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Number of Terminations :
5
Number of Elements :
1
Length :
5.1mm
Height :
1.05mm
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
28 ns
Rise Time :
23ns
FET Type :
N-Channel
Series :
PowerTrench®
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Lead Free :
Lead Free
Continuous Drain Current (ID) :
17A
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Transistor Application :
SWITCHING
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
80V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
17A Ta 50A Tc
JESD-30 Code :
R-PDSO-F5
Rds On (Max) @ Id, Vgs :
4.8m Ω @ 17A, 10V
Datasheets
FDMS86310
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86310 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-PowerTDFN, Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMS86310 pinout, FDMS86310 datasheet PDF, FDMS86310 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86310 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86310


N-Channel Tape & Reel (TR) 4.8m Ω @ 17A, 10V ±20V 6290pF @ 40V 95nC @ 10V 8-PowerTDFN

FDMS86310 Description

 

  This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.

 

FDMS86310 Features

 

Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A

Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant

 

FDMS86310 Applications

DC-DC Merchant Power Supply

 

 



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