FDMS86300

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 104W Tc

Turn-Off Delay Time :

36 ns

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

19A

Turn On Delay Time :

31 ns

Element Configuration :

Single

Number of Elements :

1

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

120A

Current - Continuous Drain (Id) @ 25°C :

19A Ta 80A Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3.4V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 19A, 10V

Continuous Drain Current (ID) :

42A

Fall Time (Typ) :

9 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

7 Weeks

Transistor Element Material :

SILICON

Weight :

68.1mg

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mount :

Surface Mount

Vgs (Max) :

±20V

Terminal Position :

Dual

Width :

6mm

Drain to Source Breakdown Voltage :

80V

FET Type :

N-Channel

Height :

1.05mm

Package / Case :

8-PowerTDFN

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

252 mJ

Input Capacitance (Ciss) (Max) @ Vds :

7082pF @ 40V

Drain-source On Resistance-Max :

0.0039Ohm

Nominal Vgs :

3.4 V

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Terminations :

8

Length :

5mm

Rise Time :

26ns

Mounting Type :

Surface Mount

Power Dissipation :

104W

Gate to Source Voltage (Vgs) :

20V

Series :

PowerTrench®

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V