FDMS86263P
- Mfr.Part #
- FDMS86263P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 4.4A/22A 8PQFN
- Stock
- 2,087
- In Stock :
- 2,087
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.85mm
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2017
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 37 ns
- Threshold Voltage :
- -2.9V
- Pulsed Drain Current-Max (IDM) :
- 70A
- Terminal Form :
- Flat
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 3905pF @ 75V
- Number of Terminations :
- 5
- Drain to Source Voltage (Vdss) :
- 150V
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 17 ns
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 22A
- Vgs (Max) :
- ±25V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta 22A Tc
- Package / Case :
- 8-PowerTDFN
- Number of Channels :
- 1
- Fall Time (Typ) :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 4.4A, 10V
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Power Dissipation :
- 104W
- Rise Time :
- 10ns
- Drain to Source Breakdown Voltage :
- -150V
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Continuous Drain Current (ID) :
- -4.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- MO-240AA
- Height :
- 1.1mm
- Drain-source On Resistance-Max :
- 0.053Ohm
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 68.1mg
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F5
- Datasheets
- FDMS86263P

P-Channel Tape & Reel (TR) 53m Ω @ 4.4A, 10V ±25V 3905pF @ 75V 63nC @ 10V 150V 8-PowerTDFN
FDMS86263P MOSFET Description
The P-Channel MOSFET FDMS86263P presents the circuit designer with a fresh choice that can streamline the circuitry while enhancing performance and parts usage. This device has very low on-resistance in mid-voltage P-Channel silicon technology and a wide operating temperature of -55 to +150 ℃.
FDMS86263P MOSFET Features
RoHS Compliant
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
100% UIL tested
This product is optimized for fast switching applications as well as load switch applications
FDMS86263P MOSFET Applications
Synchronous Rectification Applications
UIS Rating System
Active Clamp Switch
Linear Switching Applications
Totem Pole Switching Circuits
Ground-Connected Loads
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