FDMS86255ET150
- Mfr.Part #
- FDMS86255ET150
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 10A/63A POWER56
- Stock
- 2,326
- In Stock :
- 2,326
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- MO-240AA
- Package / Case :
- 8-PowerTDFN
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 4480pF @ 75V
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Continuous Drain Current (ID) :
- 63A
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 276A
- Power Dissipation-Max :
- 3.3W Ta 136W Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 12.4m Ω @ 10A, 10V
- Terminal Form :
- NO LEAD
- Fall Time (Typ) :
- 6.2 ns
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn On Delay Time :
- 21 ns
- Reach Compliance Code :
- not_compliant
- Series :
- PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 150V
- JESD-30 Code :
- R-PDSO-N5
- Lead Free :
- Lead Free
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 28 ns
- Weight :
- 56.5mg
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 63A Tc
- Rise Time :
- 4.5ns
- Number of Channels :
- 1
- Datasheets
- FDMS86255ET150
FDMS86255ET150 Documents

N-Channel Tape & Reel (TR) 12.4m Ω @ 10A, 10V ±20V 4480pF @ 75V 63nC @ 10V 150V 8-PowerTDFN
FDMS86255ET150 Description
ON Semiconductor's FDMS86255ET150 N-Channel MOSFET is a popular choice. This N-Channel MOSFET is made using a revolutionary PowerTrench? process with Shielded Gate technology. This technique's on-state resistance has been improved while keeping excellent switching performance.
FDMS86255ET150 Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next-generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86255ET150 Applications
This product is intended for general use and can be used in a variety of situations.
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