FDMS86252L

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Mfr.Part #
FDMS86252L
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 150V 4.4A 8PQFN
Stock
2,940
In Stock :
2,940

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
74mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Fall Time (Typ) :
2.9 ns
Terminal Finish :
Tin (Sn)
Length :
5mm
Rise Time :
1.4ns
Turn On Delay Time :
6.8 ns
Input Capacitance (Ciss) (Max) @ Vds :
1335pF @ 75V
Case Connection :
DRAIN
Terminal Position :
Dual
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Published :
2017
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PDSO-F5
Pbfree Code :
yes
Number of Elements :
1
Factory Lead Time :
8 Weeks
JEDEC-95 Code :
MO-240AA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Package / Case :
8-PowerTDFN
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.056Ohm
Continuous Drain Current (ID) :
4.4A
Power Dissipation :
2.5W
Number of Pins :
8
Terminal Form :
Flat
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
19 ns
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Height :
1.05mm
Rds On (Max) @ Id, Vgs :
56m Ω @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C :
4.4A Ta
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Width :
5.85mm
Number of Terminations :
5
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Pulsed Drain Current-Max (IDM) :
30A
Element Configuration :
Single
Vgs(th) (Max) @ Id :
3V @ 250µA
Power Dissipation-Max :
2.5W Ta 50W Tc
Number of Channels :
1
Drain to Source Breakdown Voltage :
150V
Avalanche Energy Rating (Eas) :
73 mJ
Datasheets
FDMS86252L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86252L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Channels:1, FDMS86252L pinout, FDMS86252L datasheet PDF, FDMS86252L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86252L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86252L


N-Channel Tape & Reel (TR) 56m Ω @ 4.4A, 10V ±20V 1335pF @ 75V 21nC @ 10V 8-PowerTDFN

FDMS86252L     Description


  The N-channel MOSFET uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance.

 

FDMS86252L     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A

Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A

Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A

Advanced package and silicon combination for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

100% UIL tested

RoHS Compliant


FDMS86252L     Applications


This product is general usage and suitable for many different applications

 





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