FDMS86252L
- Mfr.Part #
- FDMS86252L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.4A 8PQFN
- Stock
- 2,940
- In Stock :
- 2,940
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 74mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Fall Time (Typ) :
- 2.9 ns
- Terminal Finish :
- Tin (Sn)
- Length :
- 5mm
- Rise Time :
- 1.4ns
- Turn On Delay Time :
- 6.8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1335pF @ 75V
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Published :
- 2017
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PDSO-F5
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- JEDEC-95 Code :
- MO-240AA
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.056Ohm
- Continuous Drain Current (ID) :
- 4.4A
- Power Dissipation :
- 2.5W
- Number of Pins :
- 8
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 19 ns
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.05mm
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 4.4A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5.85mm
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Pulsed Drain Current-Max (IDM) :
- 30A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 150V
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Datasheets
- FDMS86252L

N-Channel Tape & Reel (TR) 56m Ω @ 4.4A, 10V ±20V 1335pF @ 75V 21nC @ 10V 8-PowerTDFN
FDMS86252L Description
The N-channel MOSFET uses advanced PowerTritch manufacturing processes, combined with shielded grid technology. The process has been optimized for on-resistance, but it still maintains excellent switching performance.
FDMS86252L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
Advanced package and silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86252L Applications
This product is general usage and suitable for many different applications
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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