FDMS86252

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

16A

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 69W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Width :

6mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

REACH SVHC :

No SVHC

Rise Time :

2.3ns

Turn On Delay Time :

7.7 ns

Height :

1.05mm

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Fall Time (Typ) :

3.2 ns

Terminal Form :

Flat

JEDEC-95 Code :

MO-240AA

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4.6A

Pbfree Code :

yes

Length :

5mm

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

50 mJ

Package / Case :

8-PowerTDFN

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 16A Tc

FET Type :

N-Channel

Power Dissipation :

69W

Threshold Voltage :

2.8V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Pins :

8

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 75V

Vgs (Max) :

±20V

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

51m Ω @ 4.6A, 10V

Mount :

Surface Mount

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Weight :

74mg

Pulsed Drain Current-Max (IDM) :

20A

Turn-Off Delay Time :

15 ns

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99