FDMS86252

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

4.6A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

50 mJ

Weight :

74mg

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 69W Tc

Operating Temperature :

-55°C~150°C TJ

Height :

1.05mm

Width :

6mm

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

7.7 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 16A Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

51m Ω @ 4.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 75V

Continuous Drain Current (ID) :

16A

Element Configuration :

Single

Terminal Form :

Flat

Radiation Hardening :

No

Vgs (Max) :

±20V

Number of Terminations :

5

Terminal Position :

Dual

Series :

PowerTrench®

Threshold Voltage :

2.8V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JEDEC-95 Code :

MO-240AA

Power Dissipation :

69W

Lead Free :

Lead Free

Length :

5mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

REACH SVHC :

No SVHC

Package / Case :

8-PowerTDFN

Drain to Source Breakdown Voltage :

150V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

20A

Mount :

Surface Mount

Rise Time :

2.3ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

3.2 ns

Number of Pins :

8

Turn-Off Delay Time :

15 ns