FDMS86250

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 96W Tc

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Terminations :

5

Rise Time :

4.3ns

JEDEC-95 Code :

MO-240AA

Number of Pins :

8

Height :

1.05mm

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Lead Free :

Lead Free

Turn On Delay Time :

14 ns

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

6.7A

Mounting Type :

Surface Mount

Turn-Off Delay Time :

22 ns

Element Configuration :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

20A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2010

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.7A, 10V

JESD-30 Code :

R-PDSO-F5

Series :

PowerTrench®

Width :

6mm

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta 20A Tc

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

Weight :

68.1mg

Drain-source On Resistance-Max :

0.025Ohm

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

4.2 ns

Terminal Finish :

Tin (Sn)

Power Dissipation :

96W

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Case Connection :

DRAIN