FDMS86250

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Fall Time (Typ) :

4.2 ns

Rise Time :

4.3ns

Published :

2010

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

96W

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta 20A Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.7A, 10V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Length :

5mm

Element Configuration :

Single

Continuous Drain Current (ID) :

6.7A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

22 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Height :

1.05mm

Vgs (Max) :

±20V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Elements :

1

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pbfree Code :

yes

Terminal Position :

Dual

Width :

6mm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Factory Lead Time :

6 Weeks

Turn On Delay Time :

14 ns

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Drain Current-Max (Abs) (ID) :

20A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 75V

Weight :

68.1mg

Drain to Source Breakdown Voltage :

150V

JEDEC-95 Code :

MO-240AA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

PowerTrench®

Drain-source On Resistance-Max :

0.025Ohm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-F5

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta 96W Tc