FDMS8622

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta 31W Tc

Fall Time (Typ) :

2.1 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Terminal Position :

Dual

Width :

6mm

Additional Feature :

ULTRA-LOW RESISTANCE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 50V

Transistor Application :

SWITCHING

Series :

PowerTrench®

JESD-30 Code :

R-PDSO-N5

Drain-source On Resistance-Max :

0.056Ohm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JEDEC-95 Code :

MO-240AA

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

30A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

10.2 ns

Rise Time :

1.7ns

Factory Lead Time :

8 Weeks

Height :

1.05mm

Number of Elements :

1

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Continuous Drain Current (ID) :

4.8A

Number of Terminations :

5

Mounting Type :

Surface Mount

Published :

2010

Rds On (Max) @ Id, Vgs :

56m Ω @ 4.8A, 10V

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Weight :

74mg

Radiation Hardening :

No

Turn On Delay Time :

5.7 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta 16.5A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Pins :

8