FDMS8622
- Mfr.Part #
- FDMS8622
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.8A/16.5A 8QFN
- Stock
- 45,677
- In Stock :
- 45,677
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Length :
- 5mm
- Pbfree Code :
- yes
- Width :
- 6mm
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 4.8A, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- MO-240AA
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Power Dissipation :
- 2.5W
- Drain-source On Resistance-Max :
- 0.056Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PDSO-N5
- Fall Time (Typ) :
- 2.1 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 4.8A
- Turn-Off Delay Time :
- 10.2 ns
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 1.05mm
- Rise Time :
- 1.7ns
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Ta 16.5A Tc
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 50V
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 74mg
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 30A
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 2.5W Ta 31W Tc
- Turn On Delay Time :
- 5.7 ns
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Radiation Hardening :
- No
- Datasheets
- FDMS8622
FDMS8622 Documents

N-Channel Tape & Reel (TR) 56m Ω @ 4.8A, 10V ±20V 400pF @ 50V 7nC @ 10V 8-PowerTDFN
FDMS8622 Description
FDMS8622 is a 100v N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS8622 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS8622 is in the Power-56-8 package with 2.5W power dissipation.
FDMS8622 Features
-
Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
-
Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
-
High-performance trench technology for extremely low rDS(on)
-
High power and current handling capability in a widely used surface mount package
-
100% UIL Tested
-
Termination is Lead-free and RoHS Compliant
FDMS8622 Applications
-
DC-DC Merchant Power Supply
-
POE Protection Switch
-
DC-DC Switch
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