FDMS86202ET120

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Mfr.Part #
FDMS86202ET120
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 120V 13.5/102A PWR56
Stock
12
In Stock :
12

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
13.5A Ta 102A Tc
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Power Dissipation-Max :
3.3W Ta 187W Tc
Rds On (Max) @ Id, Vgs :
7.2m Ω @ 13.5A, 10V
Package / Case :
8-PowerTDFN
Weight :
56.5mg
Lead Free :
Lead Free
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Series :
PowerTrench®
Element Configuration :
Single
Turn On Delay Time :
21 ns
Turn-Off Delay Time :
27 ns
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
4585pF @ 60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
120V
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
5 ns
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
64nC @ 10V
Factory Lead Time :
12 Weeks
Continuous Drain Current (ID) :
102A
Mounting Type :
Surface Mount
Rise Time :
6ns
Mount :
Surface Mount
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Reach Compliance Code :
not_compliant
Datasheets
FDMS86202ET120
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86202ET120 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, Number of Pins:8, Number of Channels:1, Mounting Type:Surface Mount, FDMS86202ET120 pinout, FDMS86202ET120 datasheet PDF, FDMS86202ET120 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86202ET120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86202ET120


N-Channel Tape & Reel (TR) 7.2m Ω @ 13.5A, 10V ±20V 4585pF @ 60V 64nC @ 10V 120V 8-PowerTDFN

FDMS86202ET120 Description


The FDMS86202ET120 N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.



FDMS86202ET120 Features


  • Extended TJ rating to 175°C

  • Shielded Gate MOSFET Technology

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86202ET120 Applications


  • DC-DC Conversion

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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