FDMS86202ET120
- Mfr.Part #
- FDMS86202ET120
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 13.5/102A PWR56
- Stock
- 12
- In Stock :
- 12
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 102A Tc
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Power Dissipation-Max :
- 3.3W Ta 187W Tc
- Rds On (Max) @ Id, Vgs :
- 7.2m Ω @ 13.5A, 10V
- Package / Case :
- 8-PowerTDFN
- Weight :
- 56.5mg
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Turn On Delay Time :
- 21 ns
- Turn-Off Delay Time :
- 27 ns
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 4585pF @ 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 120V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 5 ns
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 102A
- Mounting Type :
- Surface Mount
- Rise Time :
- 6ns
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Reach Compliance Code :
- not_compliant
- Datasheets
- FDMS86202ET120

N-Channel Tape & Reel (TR) 7.2m Ω @ 13.5A, 10V ±20V 4585pF @ 60V 64nC @ 10V 120V 8-PowerTDFN
FDMS86202ET120 Description
The FDMS86202ET120 N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMS86202ET120 Features
-
Extended TJ rating to 175°C
-
Shielded Gate MOSFET Technology
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS86202ET120 Applications
-
DC-DC Conversion
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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