FDMS86201

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Mfr.Part #
FDMS86201
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 120V 11.6A/49A 8PQFN
Stock
3
In Stock :
3

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
6mm
Mounting Type :
Surface Mount
FET Type :
N-Channel
Pbfree Code :
yes
JESD-609 Code :
e3
Terminal Position :
Dual
JEDEC-95 Code :
MO-240AA
Weight :
68.1mg
JESD-30 Code :
R-PDSO-F5
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
65A
Element Configuration :
Single
Fall Time (Typ) :
7.1 ns
Radiation Hardening :
No
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Package / Case :
8-PowerTDFN
Terminal Form :
Flat
Turn On Delay Time :
13 ns
Turn-Off Delay Time :
27 ns
Power Dissipation :
104W
Resistance :
14.5mOhm
Mount :
Surface Mount
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2735pF @ 60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.05mm
Threshold Voltage :
2.6V
Number of Elements :
1
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
264 mJ
Published :
2017
Length :
5mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
8
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
120V
Factory Lead Time :
15 Weeks
Rds On (Max) @ Id, Vgs :
11.5m Ω @ 11.6A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Case Connection :
DRAIN
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
35A
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
5
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 10 hours ago)
Rise Time :
7.7ns
Series :
PowerTrench®
Current - Continuous Drain (Id) @ 25°C :
11.6A Ta 35A Tc
Power Dissipation-Max :
2.5W Ta 104W Tc
Nominal Vgs :
2.6 V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86201 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Number of Pins:8, Number of Terminations:5, FDMS86201 pinout, FDMS86201 datasheet PDF, FDMS86201 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86201 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86201


N-Channel Tape & Reel (TR) 11.5m Ω @ 11.6A, 10V ±20V 2735pF @ 60V 46nC @ 10V 8-PowerTDFN

FDMS86201 Description


The FDMS86201 N-Channel MOSFET is made with a sophisticated Power Trench? technology that has been specifically optimized to reduce on-state resistance while maintaining excellent switching performance.



FDMS86201 Features


  • 100% UIL tested

  • RoHS Compliant

  • MSL1 robust package design

  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A

  • Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A

  • Advanced Package and Silicon combination for low rDS(on)and high efficiency



FDMS86201 Applications


  • DC-DC conversion


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