FDMS86200
- Mfr.Part #
- FDMS86200
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 9.6A/35A 8PQFN
- Stock
- 373
- In Stock :
- 373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 5
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Drain to Source Breakdown Voltage :
- 150V
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- MO-240AA
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 9.6A Ta 35A Tc
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PDSO-F5
- Published :
- 2010
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 18 Weeks
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Width :
- 6mm
- Package / Case :
- 8-PowerTDFN
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 9.6A, 10V
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Resistance :
- 21mOhm
- Drain Current-Max (Abs) (ID) :
- 52A
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2715pF @ 75V
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 5.8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 7.9ns
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 2.5V
- Continuous Drain Current (ID) :
- 9.6A
- Weight :
- 68.1mg
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Case Connection :
- DRAIN
- Length :
- 5mm
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 27 ns
- Series :
- PowerTrench®
- Datasheets
- FDMS86200
FDMS86200 Documents

N-Channel Tape & Reel (TR) 18m Ω @ 9.6A, 10V ±20V 2715pF @ 75V 46nC @ 10V 8-PowerTDFN
FDMS86200 Description
The N-channel MOSFET FDMS86200 is manufactured using on Semiconductor's advanced POWERTRENCH process, which uses shielded gate technology. The process has been optimized for on-state resistors, but still maintains excellent switching performance.
FDMS86200 Features
? Shielded Gate MOSFET Technology
? Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A
? Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A
? Advanced Package and Silicon combination for low rDS(on) and high
efficiency
? MSL1 robust package design
? 100% UIL tested
? RoHS Compliant
FDMS86200 Applications
? DC?DC Conversion
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