FDMS86200

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Mfr.Part #
FDMS86200
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 150V 9.6A/35A 8PQFN
Stock
373
In Stock :
373

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Threshold Voltage :
2.5V
Gate to Source Voltage (Vgs) :
20V
Width :
6mm
Drain Current-Max (Abs) (ID) :
52A
JEDEC-95 Code :
MO-240AA
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
2715pF @ 75V
Resistance :
21mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Pbfree Code :
yes
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Terminations :
5
Rise Time :
7.9ns
Drain to Source Breakdown Voltage :
150V
Height :
1.1mm
Max Junction Temperature (Tj) :
150°C
Weight :
68.1mg
Turn-Off Delay Time :
27 ns
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Fall Time (Typ) :
5.8 ns
Terminal Form :
Flat
Lead Free :
Lead Free
Mount :
Surface Mount
Continuous Drain Current (ID) :
9.6A
Terminal Position :
Dual
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Length :
5mm
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
220 mJ
Power Dissipation-Max :
2.5W Ta 104W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
9.6A Ta 35A Tc
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Vgs (Max) :
±20V
Contact Plating :
Tin
Rds On (Max) @ Id, Vgs :
18m Ω @ 9.6A, 10V
JESD-30 Code :
R-PDSO-F5
Transistor Element Material :
SILICON
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Published :
2010
ECCN Code :
EAR99
Series :
PowerTrench®
Turn On Delay Time :
13 ns
Factory Lead Time :
18 Weeks
JESD-609 Code :
e3
Case Connection :
DRAIN
Packaging :
Tape and Reel (TR)
Package / Case :
8-PowerTDFN
Power Dissipation :
2.5W
Number of Channels :
1
Radiation Hardening :
No
Mounting Type :
Surface Mount
Number of Pins :
8
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86200 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Package / Case:8-PowerTDFN, Number of Channels:1, Mounting Type:Surface Mount, Number of Pins:8, FDMS86200 pinout, FDMS86200 datasheet PDF, FDMS86200 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86200 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86200


N-Channel Tape & Reel (TR) 18m Ω @ 9.6A, 10V ±20V 2715pF @ 75V 46nC @ 10V 8-PowerTDFN

FDMS86200 Description


The N-channel MOSFET FDMS86200   is manufactured using on Semiconductor's advanced POWERTRENCH process, which uses shielded gate technology. The process has been optimized for on-state resistors, but still maintains excellent switching performance.

 


FDMS86200 Features


? Shielded Gate MOSFET Technology

? Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A

? Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A

? Advanced Package and Silicon combination for low rDS(on) and high

efficiency

? MSL1 robust package design

? 100% UIL tested

? RoHS Compliant


FDMS86200  Applications

? DC?DC Conversion


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