FDMS86200

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

FET Type :

N-Channel

Power Dissipation :

2.5W

Turn-Off Delay Time :

27 ns

JESD-609 Code :

e3

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Element Configuration :

Single

Weight :

68.1mg

Number of Elements :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta 35A Tc

Drain to Source Breakdown Voltage :

150V

ECCN Code :

EAR99

Height :

1.1mm

Published :

2010

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

220 mJ

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.6A, 10V

Number of Pins :

8

Width :

6mm

REACH SVHC :

No SVHC

Length :

5mm

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Series :

PowerTrench®

Threshold Voltage :

2.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Continuous Drain Current (ID) :

9.6A

Rise Time :

7.9ns

Terminal Position :

Dual

JEDEC-95 Code :

MO-240AA

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta 104W Tc

Drain Current-Max (Abs) (ID) :

52A

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2715pF @ 75V

Resistance :

21mOhm

Package / Case :

8-PowerTDFN

Fall Time (Typ) :

5.8 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Channels :

1