FDMS86183

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Mfr.Part #
FDMS86183
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 51A 8PQFN
Stock
26,790
In Stock :
26,790

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 50V
Drain to Source Voltage (Vdss) :
100V
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 6V
Rds On (Max) @ Id, Vgs :
12.8m Ω @ 16A, 10V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
51A Tc
Power Dissipation-Max :
63W Tc
Vgs (Max) :
±20V
Factory Lead Time :
20 Weeks
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 90µA
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Weight :
68.1mg
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Mounting Type :
Surface Mount
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-PowerTDFN
Series :
PowerTrench®
Datasheets
FDMS86183
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86183 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, FDMS86183 pinout, FDMS86183 datasheet PDF, FDMS86183 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86183 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86183


N-Channel Tape & Reel (TR) 12.8m Ω @ 16A, 10V ±20V 1515pF @ 50V 14nC @ 6V 100V 8-PowerTDFN

FDMS86183   Description


  This N-channel MV MOSFET is produced using an advanced PowerTrench process that combines shielded gate technology. This process is optimized to minimize on-resistance while using the best software diodes in the industry to maintain excellent switching performance.


FDMS86183    Features

Shielded grid MOSFET technology  

Maximum rDS (on) = 12.8m Ω (VGS = 10V, ID = 16A)

Maximum rDS (on) = 34.6m Ω (VGS = 6V, ID = 8A)

50% lower Qrr than other MOSFET vendors

Reduced switching noise / EMI

Robust package Design of MSL1

100% tested by UIL

Comply with RoHS standard

 

FDMS86183   Applications


This product is general usage and suitable for many different applications.



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