FDMS86181

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Mfr.Part #
FDMS86181
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 44A/124A 8PQFN
Stock
6,691
In Stock :
6,691

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
1.1mm
Power Dissipation-Max :
2.5W Ta 125W Tc
Terminal Finish :
Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
4125pF @ 50V
Turn Off Time-Max (toff) :
52ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Drain to Source Breakdown Voltage :
100V
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
4.2m Ω @ 44A, 10V
Factory Lead Time :
20 Weeks
Package / Case :
8-PowerTDFN
Reach Compliance Code :
not_compliant
Turn On Delay Time :
17 ns
Current - Continuous Drain (Id) @ 25°C :
44A Ta 124A Tc
ECCN Code :
EAR99
Feedback Cap-Max (Crss) :
40 pF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Element Configuration :
Single
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Flat
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
17A
Max Junction Temperature (Tj) :
150°C
Vgs(th) (Max) @ Id :
4V @ 250µA
Avalanche Energy Rating (Eas) :
337 mJ
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 10V
Turn On Time-Max (ton) :
49ns
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0042Ohm
Terminal Position :
Dual
Number of Elements :
1
Mounting Type :
Surface Mount
FET Type :
N-Channel
Turn-Off Delay Time :
25 ns
Number of Channels :
1
Threshold Voltage :
2V
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Number of Terminations :
5
Number of Pins :
8
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
JEDEC-95 Code :
MO-240AA
Power Dissipation :
2.5W
Case Connection :
DRAIN
Weight :
90mg
Series :
PowerTrench®
Datasheets
FDMS86181
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86181 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Number of Terminations:5, Number of Pins:8, FDMS86181 pinout, FDMS86181 datasheet PDF, FDMS86181 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86181 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86181


N-Channel Tape & Reel (TR) 4.2m Ω @ 44A, 10V ±20V 4125pF @ 50V 59nC @ 10V 8-PowerTDFN

FDMS86181 Description


The FDMS86181 MOSFET is manufactured utilizing the PowerTrench? process, which includes Shielded Gate technology. With the best in class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.



FDMS86181 Features


? MOSFETs with Shielded Gates


? At VGS = 10 V, ID = 44 A, max rDS(on) = 4.2 m


? At VGS = 6 V, ID = 22 A, max rDS(on) = 12 m


? Attention Deficit Hyperactivity Disorder


? 50% lower Qrr than other MOSFET manufacturers


? Reduces switching noise and EMI


? MSL1 has a strong packaging design.


? UIL has been tested 100 percent.


? Compliant with RoHS



FDMS86181 Applications


FDMS86181 is intended for general use and can be used in a variety of situations.


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