FDMS86180

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Mfr.Part #
FDMS86180
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 151A POWER56
Stock
4,455
In Stock :
4,455

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Terminal Finish :
Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
6215pF @ 50V
Continuous Drain Current (ID) :
151A
Max Junction Temperature (Tj) :
150°C
Power Dissipation :
138W
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Series :
PowerTrench®
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 67A, 10V
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Mounting Type :
Surface Mount
Factory Lead Time :
20 Weeks
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
30 ns
Number of Channels :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
8-PowerTDFN
Vgs(th) (Max) @ Id :
4V @ 370μA
Power Dissipation-Max :
138W Tc
Height :
1.1mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 6V
JESD-609 Code :
e3
Turn On Delay Time :
24 ns
Current - Continuous Drain (Id) @ 25°C :
151A Tc
Drain to Source Breakdown Voltage :
100V
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Threshold Voltage :
3.2V
Mount :
Surface Mount
Pbfree Code :
yes
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86180 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, FDMS86180 pinout, FDMS86180 datasheet PDF, FDMS86180 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86180 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86180


N-Channel Tape & Reel (TR) 3.2m Ω @ 67A, 10V ±20V 6215pF @ 50V 54nC @ 6V 8-PowerTDFN

FDMS86180 Description


FDMS86180 is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. The operating temperature of FDMS86180 is -55°C~150°C TJ and its maximum power dissipation are 138W. FDMS86180 has 8 pins and it is available in Tape & Reel (TR) packaging way. This N-Channel MV MOSFET is produced using an advanced Power Trench? process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.



FDMS86180 Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A

  • Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A

  • 50% Lower Qrr than Other MOSFET Suppliers

  • Lowers Switching Noise/EMI

  • MSL1 Robust Package Design

  • 100% UIL Tested

  • RoHS Compliant



FDMS86180 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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