FDMS86163P
- Mfr.Part #
- FDMS86163P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 7.9A/50A 8PQFN
- Stock
- 3,885
- In Stock :
- 3,885
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5mm
- Number of Terminations :
- 5
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 104W
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.9A Ta 50A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 7.9A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Fall Time (Typ) :
- 6.9 ns
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F5
- Turn On Delay Time :
- 17 ns
- Weight :
- 68.1mg
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 7.9A
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Rise Time :
- 8.8ns
- Turn-Off Delay Time :
- 33 ns
- Factory Lead Time :
- 16 Weeks
- Drain-source On Resistance-Max :
- 0.022Ohm
- Terminal Form :
- Flat
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -100V
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Package / Case :
- 8-PowerTDFN
- Height :
- 1.1mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4085pF @ 50V
- Threshold Voltage :
- -2.8V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Channels :
- 1
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- MO-240AA
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Dual
- Published :
- 2017
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Width :
- 5.85mm
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- -50A
- Datasheets
- FDMS86163P
FDMS86163P Documents

P-Channel Tape & Reel (TR) 22m Ω @ 7.9A, 10V ±25V 4085pF @ 50V 59nC @ 10V 100V 8-PowerTDFN
FDMS86163P Description
These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140.
FDMS86163P Features
Products are pre-selected in DC's current gain
FDMS86163P Application
General-purpose
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