FDMS86150ET100

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Mfr.Part #
FDMS86150ET100
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 16A POWER56
Stock
5,289
In Stock :
5,289

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16A Ta 128A Tc
Drain to Source Breakdown Voltage :
100V
Weight :
56.5mg
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
3.3W Ta 187W Tc
Turn On Delay Time :
18 ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Pbfree Code :
yes
Series :
PowerTrench®
Rise Time :
8.3ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
128A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Fall Time (Typ) :
6 ns
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
4.85m Ω @ 16A, 10V
Element Configuration :
Single
Package / Case :
8-PowerTDFN
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Number of Pins :
8
Factory Lead Time :
12 Weeks
Number of Channels :
1
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
4065pF @ 50V
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Mount :
Surface Mount
Lead Free :
Lead Free
FET Type :
N-Channel
ECCN Code :
EAR99
Turn-Off Delay Time :
28 ns
Datasheets
FDMS86150ET100
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86150ET100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Pins:8, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, FDMS86150ET100 pinout, FDMS86150ET100 datasheet PDF, FDMS86150ET100 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86150ET100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86150ET100


N-Channel Tape & Reel (TR) 4.85m Ω @ 16A, 10V ±20V 4065pF @ 50V 62nC @ 10V 8-PowerTDFN

FDMS86150ET100 Description

The N-Channel MOSFET FDMS86150ET100 is produced using an advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.The device is characterized across a –55°C to +175°C temperature range which makes it suitable for industrial applications.
FDMS86150ET100 Features

Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86150ET100 Applications

Automotive
Advanced driver assistance systems (ADAS)Body electronics & lightingHybrid, electric & powertrain systemsInfotainment & cluster
Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
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