FDMS86150

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.7W Ta 156W Tc

Radiation Hardening :

No

Pbfree Code :

yes

Packaging :

Digi-Reel®

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 60A Tc

Terminal Position :

Dual

Turn-Off Delay Time :

28 ns

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

4.85m Ω @ 16A, 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Mount :

Surface Mount

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Weight :

56.5mg

JESD-30 Code :

R-PDSO-N5

Peak Reflow Temperature (Cel) :

260

Rise Time :

8.3ns

Input Capacitance (Ciss) (Max) @ Vds :

4065pF @ 50V

Series :

PowerTrench®

Height :

1.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.25mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Avalanche Energy Rating (Eas) :

726 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

300A

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Terminations :

5

Element Configuration :

Single

Length :

5.1mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Power Dissipation :

156W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Terminal Finish :

Tin

JEDEC-95 Code :

MO-240AA

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Factory Lead Time :

13 Weeks

Turn On Delay Time :

18 ns

Fall Time (Typ) :

6 ns