FDMS86105
- Mfr.Part #
- FDMS86105
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6A/26A 8PQFN
- Stock
- 10,168
- In Stock :
- 10,168
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerTDFN
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 5
- JEDEC-95 Code :
- MO-240AA
- Power Dissipation :
- 48W
- Weight :
- 68.1mg
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Series :
- PowerTrench®
- Width :
- 6mm
- JESD-30 Code :
- R-PDSO-F5
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 6A
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 6A, 10V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta 26A Tc
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Threshold Voltage :
- 2.8V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.034Ohm
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 6A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Length :
- 5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn On Delay Time :
- 6.7 ns
- Fall Time (Typ) :
- 2.4 ns
- Pulsed Drain Current-Max (IDM) :
- 30A
- Turn-Off Delay Time :
- 12 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 645pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 2.5W Ta 48W Tc
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Height :
- 1.05mm
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 2.1ns
- Factory Lead Time :
- 13 Weeks
- Datasheets
- FDMS86105

N-Channel Tape & Reel (TR) 34m Ω @ 6A, 10V ±20V 645pF @ 50V 11nC @ 10V 8-PowerTDFN
FDMS86105 Description
FDMS86105 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of TFDMS86105 is -55°C~150°C TJ and its maximum power dissipation is 48W Tc. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86105 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 34 m? at VGS = 10 V, ID = 6 A
-
Max rDS(on) = 54 m? at VGS = 6 V, ID = 4.5 A
-
Advanced package and silicon combination for low rDS(on) and high efficiency
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS86105 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
-
DC-DC Merchant Power Supply
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