FDMS86105

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Mfr.Part #
FDMS86105
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 6A/26A 8PQFN
Stock
10,168
In Stock :
10,168

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
34m Ω @ 6A, 10V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
13 Weeks
JEDEC-95 Code :
MO-240AA
Drain Current-Max (Abs) (ID) :
6A
Radiation Hardening :
No
Length :
5mm
Rise Time :
2.1ns
Vgs (Max) :
±20V
Power Dissipation-Max :
2.5W Ta 48W Tc
Power Dissipation :
48W
Threshold Voltage :
2.8V
Turn-Off Delay Time :
12 ns
Continuous Drain Current (ID) :
6A
Number of Elements :
1
REACH SVHC :
No SVHC
Terminal Position :
Dual
Avalanche Energy Rating (Eas) :
50 mJ
Mount :
Surface Mount
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
645pF @ 50V
Weight :
68.1mg
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Fall Time (Typ) :
2.4 ns
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
6.7 ns
Package / Case :
8-PowerTDFN
Pulsed Drain Current-Max (IDM) :
30A
Pbfree Code :
yes
Series :
PowerTrench®
Case Connection :
DRAIN
Element Configuration :
Single
JESD-609 Code :
e3
Number of Pins :
8
Transistor Application :
SWITCHING
Number of Terminations :
5
Terminal Finish :
Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
6A Ta 26A Tc
Drain-source On Resistance-Max :
0.034Ohm
FET Type :
N-Channel
Height :
1.05mm
Drain to Source Breakdown Voltage :
100V
JESD-30 Code :
R-PDSO-F5
Width :
6mm
Terminal Form :
Flat
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86105 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Number of Pins:8, Number of Terminations:5, FDMS86105 pinout, FDMS86105 datasheet PDF, FDMS86105 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86105 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86105


N-Channel Tape & Reel (TR) 34m Ω @ 6A, 10V ±20V 645pF @ 50V 11nC @ 10V 8-PowerTDFN

FDMS86105 Description


FDMS86105 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of TFDMS86105 is -55°C~150°C TJ and its maximum power dissipation is 48W Tc. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.



FDMS86105 Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 34 m? at VGS = 10 V, ID = 6 A

  • Max rDS(on) = 54 m? at VGS = 6 V, ID = 4.5 A

  • Advanced package and silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86105 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial

  • DC-DC Merchant Power Supply


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