FDMS86104

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Mfr.Part #
FDMS86104
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 7A/16A 8PQFN
Stock
47,177
In Stock :
47,177

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
6mm
Drain-source On Resistance-Max :
0.024Ohm
Turn On Delay Time :
8 ns
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
Terminal Position :
Dual
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
100V
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
96 mJ
Series :
PowerTrench®
Rise Time :
3.5ns
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Pbfree Code :
yes
Current :
16A
Element Configuration :
Single
Published :
2006
JESD-30 Code :
R-PDSO-F5
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
7A Ta 16A Tc
Power Dissipation :
73W
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Turn-Off Delay Time :
14.3 ns
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
923pF @ 50V
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Fall Time (Typ) :
3.2 ns
Length :
5mm
Height :
1.05mm
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
24m Ω @ 7A, 10V
Number of Terminations :
5
JEDEC-95 Code :
MO-240AA
Factory Lead Time :
8 Weeks
FET Type :
N-Channel
Threshold Voltage :
2.9V
Voltage :
100V
Terminal Form :
Flat
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Continuous Drain Current (ID) :
16A
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Package / Case :
8-PowerTDFN
Transistor Element Material :
SILICON
Power Dissipation-Max :
2.5W Ta 73W Tc
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86104 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, Voltage:100V, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, FDMS86104 pinout, FDMS86104 datasheet PDF, FDMS86104 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86104 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86104


N-Channel Tape & Reel (TR) 24m Ω @ 7A, 10V ±20V 923pF @ 50V 16nC @ 10V 8-PowerTDFN

FDMS86104 Description


The FDMS86104 N-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.



FDMS86104 Features


  • Shielded Gate MOSFET Technology

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant

  • No SVHC

  • Lead Free



FDMS86104 Applications


  • DC-DC Conversion

  • Switching Application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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