FDMS86104

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.024Ohm

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

923pF @ 50V

ECCN Code :

EAR99

Element Configuration :

Single

Threshold Voltage :

2.9V

REACH SVHC :

No SVHC

Terminal Position :

Dual

Factory Lead Time :

8 Weeks

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

7A Ta 16A Tc

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Height :

1.05mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Voltage :

100V

Rise Time :

3.5ns

Width :

6mm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.2 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Turn-Off Delay Time :

14.3 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Package / Case :

8-PowerTDFN

Current :

16A

Published :

2006

Series :

PowerTrench®

Case Connection :

DRAIN

Continuous Drain Current (ID) :

16A

Avalanche Energy Rating (Eas) :

96 mJ

Vgs (Max) :

±20V

Number of Pins :

8

Pbfree Code :

yes

Mount :

Surface Mount

JEDEC-95 Code :

MO-240AA

Power Dissipation-Max :

2.5W Ta 73W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

73W

Turn On Delay Time :

8 ns