FDMS86104

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Mfr.Part #
FDMS86104
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerTDFN
Datasheet
Download
Description
N-CHANNEL SHIELDED GATE POWERTRE
Stock
41,504
In Stock :
41,504

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 73W Tc
Voltage :
100V
Power Dissipation :
73W
Number of Pins :
8
Terminal Form :
Flat
Width :
6mm
JEDEC-95 Code :
MO-240AA
Fall Time (Typ) :
3.2 ns
Turn-Off Delay Time :
14.3 ns
Rds On (Max) @ Id, Vgs :
24m Ω @ 7A, 10V
Current :
16A
Length :
5mm
JESD-30 Code :
R-PDSO-F5
Package / Case :
8-PowerTDFN
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.024Ohm
Threshold Voltage :
2.9V
Element Configuration :
Single
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
923pF @ 50V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
16A
Transistor Application :
SWITCHING
Rise Time :
3.5ns
Packaging :
Tape and Reel (TR)
Drain to Source Breakdown Voltage :
100V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
ECCN Code :
EAR99
JESD-609 Code :
e3
Number of Terminations :
5
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
7A Ta 16A Tc
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Series :
PowerTrench®
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
1.05mm
Terminal Position :
Dual
Avalanche Energy Rating (Eas) :
96 mJ
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±20V
Published :
2006
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Turn On Delay Time :
8 ns
RoHS Status :
ROHS3 Compliant
Datasheets
FDMS86104
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS86104 from Chip IC,where excellence meets affordability. This product stands out with its Voltage:100V, Number of Pins:8, Package / Case:8-PowerTDFN, Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMS86104 pinout, FDMS86104 datasheet PDF, FDMS86104 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS86104 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 24m Ω @ 7A, 10V ±20V 923pF @ 50V 16nC @ 10V 8-PowerTDFN

FDMS86104 Description


The FDMS86104 N-Channel MOSFET is produced using On Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.



FDMS86104 Features


  • Shielded Gate MOSFET Technology

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant

  • No SVHC

  • Lead Free



FDMS86104 Applications


  • DC-DC Conversion

  • Switching Application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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