FDMS86103L

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Mfr.Part #
FDMS86103L
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 12A/49A 8PQFN
Stock
34,458
In Stock :
34,458

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
5mm
Vgs (Max) :
±20V
Threshold Voltage :
1.9V
RoHS Status :
ROHS3 Compliant
Weight :
68.1mg
Terminal Form :
Flat
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Package / Case :
8-PowerTDFN
Number of Pins :
8
Drain to Source Breakdown Voltage :
100V
Factory Lead Time :
6 Weeks
Number of Elements :
1
Fall Time (Typ) :
6 ns
JESD-609 Code :
e3
Contact Plating :
Tin
Turn-Off Delay Time :
35 ns
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Power Dissipation-Max :
2.5W Ta 104W Tc
JEDEC-95 Code :
MO-240AA
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
12A Ta 49A Tc
Transistor Element Material :
SILICON
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Series :
PowerTrench®
Published :
2010
Rds On (Max) @ Id, Vgs :
8m Ω @ 12A, 10V
JESD-30 Code :
R-PDSO-F5
Power Dissipation :
2.5W
Input Capacitance (Ciss) (Max) @ Vds :
3710pF @ 50V
Pbfree Code :
yes
Continuous Drain Current (ID) :
49A
Transistor Application :
SWITCHING
Terminal Position :
Dual
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Element Configuration :
Single
Case Connection :
DRAIN
ECCN Code :
EAR99
Height :
1.05mm
Width :
6.15mm
Turn On Delay Time :
13 ns
Rise Time :
7.2ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Number of Terminations :
5
Datasheets
FDMS86103L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86103L from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, FDMS86103L pinout, FDMS86103L datasheet PDF, FDMS86103L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86103L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86103L


N-Channel Tape & Reel (TR) 8m Ω @ 12A, 10V ±20V 3710pF @ 50V 60nC @ 10V 8-PowerTDFN

FDMS86103L Description


FDMS86103L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDMS86103L is -55??C~150??C TJ and its maximum power dissipation is 2.5W. In order to reduce the on-state resistance and still preserve exceptional switching performance, this N-Channel MOSFET is made using the cutting-edge Power Trench? technology.



FDMS86103L Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 8 m|? at VGS = 10 V, ID = 12 A

  • Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 10 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86103L Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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