FDMS86102LZ
- Mfr.Part #
- FDMS86102LZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A/22A 8PQFN
- Stock
- 41,641
- In Stock :
- 41,641
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 6.7 ns
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 2.5 ns
- Number of Pins :
- 8
- Nominal Vgs :
- 1.5 V
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta 22A Tc
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 7A
- Power Dissipation :
- 69W
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Width :
- 6mm
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Terminations :
- 5
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 7A
- Height :
- 1.05mm
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.025Ohm
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PDSO-F5
- Series :
- PowerTrench®
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn-Off Delay Time :
- 19 ns
- Pulsed Drain Current-Max (IDM) :
- 40A
- JEDEC-95 Code :
- MO-240AA
- Weight :
- 74mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 1305pF @ 50V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 7A, 10V
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 2.6ns
- Datasheets
- FDMS86102LZ

N-Channel Tape & Reel (TR) 25m Ω @ 7A, 10V ±20V 1305pF @ 50V 22nC @ 10V 8-PowerTDFN
FDMS86102LZ Description
Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make FDMS86102LZ MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.
FDMS86102LZ Features
-
Technology for Shielded Gate MOSFETs
-
At Vgs = 10 V, Id = 7 A, Maxds(o n) = 25 mQ.
-
At Vgs = 4.5 V, Id = 5.8 A, Maxds(o n) = 37 mQ.
-
Typical HBM ESD protection level > 6 KV (Note 4)
-
UIL Tested to the Ninety-Nineth Percentile
-
RoHS Complia nt is an acronym for "Restriction of Hazardous Substances" (RoHS).
FDMS86102LZ Applications
DC
In the verter
Synchronous Rectifier (Synchronous Rectifier)
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