FDMS86102LZ

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Mfr.Part #
FDMS86102LZ
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 7A/22A 8PQFN
Stock
41,641
In Stock :
41,641

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
6.7 ns
Fall Time (Typ) :
2.5 ns
Continuous Drain Current (ID) :
7A
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.025Ohm
Number of Terminations :
5
Series :
PowerTrench®
Length :
5mm
Weight :
74mg
JESD-30 Code :
R-PDSO-F5
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Vgs (Max) :
±20V
Terminal Form :
Flat
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drain to Source Breakdown Voltage :
100V
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Width :
6mm
Number of Elements :
1
Height :
1.05mm
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1305pF @ 50V
JESD-609 Code :
e3
Power Dissipation-Max :
2.5W Ta 69W Tc
JEDEC-95 Code :
MO-240AA
ECCN Code :
EAR99
Power Dissipation :
69W
Published :
2006
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Nominal Vgs :
1.5 V
Case Connection :
DRAIN
Rise Time :
2.6ns
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
25m Ω @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C :
7A Ta 22A Tc
Number of Pins :
8
Drain Current-Max (Abs) (ID) :
7A
Mount :
Surface Mount
Package / Case :
8-PowerTDFN
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
40A
Turn-Off Delay Time :
19 ns
Element Configuration :
Single
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Factory Lead Time :
8 Weeks
Additional Feature :
LOGIC LEVEL COMPATIBLE
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS86102LZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-PowerTDFN, FDMS86102LZ pinout, FDMS86102LZ datasheet PDF, FDMS86102LZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS86102LZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS86102LZ


N-Channel Tape & Reel (TR) 25m Ω @ 7A, 10V ±20V 1305pF @ 50V 22nC @ 10V 8-PowerTDFN

FDMS86102LZ Description


Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make FDMS86102LZ MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.



FDMS86102LZ Features


  • Technology for Shielded Gate MOSFETs

  • At Vgs = 10 V, Id = 7 A, Maxds(o n) = 25 mQ.

  • At Vgs = 4.5 V, Id = 5.8 A, Maxds(o n) = 37 mQ.

  • Typical HBM ESD protection level > 6 KV (Note 4)

  • UIL Tested to the Ninety-Nineth Percentile

  • RoHS Complia nt is an acronym for "Restriction of Hazardous Substances" (RoHS).



FDMS86102LZ Applications


DC 

In the verter

Synchronous Rectifier (Synchronous Rectifier)


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