FDMS86101DC

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14.5A Ta 60A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3135pF @ 50V

Radiation Hardening :

No

Rise Time :

8.2ns

Continuous Drain Current (ID) :

14.5A

Number of Terminations :

5

Element Configuration :

Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Lead Free :

Lead Free

Power Dissipation :

125W

Width :

5.85mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Series :

Dual Cool™, PowerTrench®

Fall Time (Typ) :

5.5 ns

Drain Current-Max (Abs) (ID) :

60A

Max Junction Temperature (Tj) :

150°C

Resistance :

7.5mOhm

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Package / Case :

8-PowerTDFN

JEDEC-95 Code :

MO-240AA

Height :

1.05mm

Power Dissipation-Max :

3.2W Ta 125W Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 14.5A, 10V

Number of Pins :

8

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Length :

5.1mm

Weight :

90mg

Number of Channels :

1

Factory Lead Time :

4 Weeks

Pulsed Drain Current-Max (IDM) :

200A

Mount :

Surface Mount

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes