FDMS8570S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.85mm

Number of Terminations :

5

Power Dissipation :

3.3W

FET Type :

N-Channel

Turn-Off Delay Time :

33 ns

Mounting Type :

Surface Mount

Height :

1.05mm

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Power Dissipation-Max :

2.5W Ta 48W Tc

Drain to Source Breakdown Voltage :

25V

ECCN Code :

EAR99

Case Connection :

DRAIN

JEDEC-95 Code :

MO-240AA

Turn On Delay Time :

11 ns

Element Configuration :

Single

Series :

PowerTrench®, SyncFET™

Weight :

90mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Package / Case :

8-PowerTDFN

JESD-609 Code :

e3

Fall Time (Typ) :

3 ns

Rise Time :

4ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

425nC @ 10V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

Mount :

Surface Mount

Pbfree Code :

yes

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

60A

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2825pF @ 13V

Number of Pins :

8

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Length :

5.1mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

45 mJ

Terminal Position :

Dual

Continuous Drain Current (ID) :

28A

Current - Continuous Drain (Id) @ 25°C :

24A Ta 60A Tc

Additional Feature :

ULTRA LOW RESISTANCE

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE