FDMS8558SDC
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- Mfr.Part #
- FDMS8558SDC
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 38A/90A 8PQFN
- Stock
- 303
- In Stock ：
- 303
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Power Dissipation :
- 89W
- Height :
- 1.05mm
- Case Connection :
- DRAIN
- Input Capacitance :
- 5.118nF
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 25V
- Number of Terminations :
- 5
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 14 ns
- Weight :
- 90mg
- JESD-30 Code :
- R-PDSO-F5
- Width :
- 5.85mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 8ns
- Max Operating Temperature :
- 150°C
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 25V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 12V
- Fall Time (Typ) :
- 7 ns
- Mount :
- Surface Mount
- Element Configuration :
- Single
- JEDEC-95 Code :
- MO-240AA
- Rds On Max :
- 1.5 MΩ
- Drain to Source Resistance :
- 5.7mOhm
- Power Dissipation :
- 41W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 140A
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 90A
- Terminal Form :
- Flat
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 51 ns
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1.4V
- Length :
- 5.1mm
- Avalanche Energy Rating (Eas) :
- 145 mJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Datasheets
- FDMS8558SDC
Tape & Reel (TR) 25V
FDMS8558SDC Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 145 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 140A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.In this case, the threshold voltage of the transistor is 1.4V, which means that it will not activate any of its functions when its threshold voltage reaches 1.4V.For this transistor to work, a voltage 25V is required between drain and source (Vdss).
FDMS8558SDC Features
the avalanche energy rating (Eas) is 145 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 5.7mOhm
a threshold voltage of 1.4V
a 25V drain to source voltage (Vdss)
FDMS8558SDC Applications
There are a lot of ON Semiconductor
FDMS8558SDC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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