FDMS8558SDC
- Mfr.Part #
- FDMS8558SDC
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 38A/90A 8PQFN
- Stock
- 303
- In Stock :
- 303
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.1mm
- Weight :
- 90mg
- Turn-Off Delay Time :
- 51 ns
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 90A
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- MO-240AA
- Rds On Max :
- 1.5 MΩ
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 25V
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 5
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 5.118nF
- Fall Time (Typ) :
- 7 ns
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 25V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 14 ns
- Avalanche Energy Rating (Eas) :
- 145 mJ
- Threshold Voltage :
- 1.4V
- Max Power Dissipation :
- 89W
- Case Connection :
- DRAIN
- Min Operating Temperature :
- -55°C
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Rise Time :
- 8ns
- Pulsed Drain Current-Max (IDM) :
- 140A
- Gate to Source Voltage (Vgs) :
- 12V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 41W
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-F5
- Drain to Source Resistance :
- 5.7mOhm
- Radiation Hardening :
- No
- Width :
- 5.85mm
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Height :
- 1.05mm
- Datasheets
- FDMS8558SDC
FDMS8558SDC Documents

Tape & Reel (TR) 25V
FDMS8558SDC Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 145 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.Peak drain current is 140A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 5.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.In this case, the threshold voltage of the transistor is 1.4V, which means that it will not activate any of its functions when its threshold voltage reaches 1.4V.For this transistor to work, a voltage 25V is required between drain and source (Vdss).
FDMS8558SDC Features
the avalanche energy rating (Eas) is 145 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 5.7mOhm
a threshold voltage of 1.4V
a 25V drain to source voltage (Vdss)
FDMS8558SDC Applications
There are a lot of ON Semiconductor
FDMS8558SDC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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