FDMS8558S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Rise Time :

8ns

Turn-Off Delay Time :

51 ns

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

33A Ta 90A Tc

Width :

5.85mm

JEDEC-95 Code :

MO-240AA

Additional Feature :

ULTRA LOW RESISTANCE

Turn On Delay Time :

14 ns

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Series :

PowerTrench®, SyncFET™

Drain Current-Max (Abs) (ID) :

90A

Pbfree Code :

yes

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

25V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

7 ns

Weight :

90mg

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Power Dissipation-Max :

2.5W Ta 78W Tc

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Length :

5.1mm

Number of Elements :

1

Element Configuration :

Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.05mm

Vgs (Max) :

±12V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

5118pF @ 13V

JESD-30 Code :

R-PDSO-F5

FET Type :

N-Channel

Lead Free :

Lead Free

Continuous Drain Current (ID) :

38A

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 33A, 10V

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Published :

2006

RoHS Status :

ROHS3 Compliant